“On the fundamentals of ALD: the importance of getting the picture right” – by Puurunen and van Ommen
Jointly with Prof. Ruud van Ommen, I (Prof. Riikka Puurunen) gave a presentation at the AVS 20th International Conference on Atomic Layer Deposition (ALD 2020) featuring the 7th International Atomic Layer Etching Workshop (ALE 2020), adapted into a Virtual Meeting, Jun 29 – Jul 1, 2020, https://ald2020.avs.org, aimed to initiate/contribute to discussion of the fundamentals in the field of atomic layer deposition (ALD).
Please find the abstract of the presentation in this blog post, below. Once the slides and video record of the talk are openly available, the purpose is to link them to this post, too.
Title: On the fundamentals of ALD: the importance of getting the picture right
Authors: Riikka L. Puurunen and J. Ruud van Ommen
Session: Precursors and Chemistry: Simulation, Modeling, and Theory of ALD
Atomic layer deposition (ALD) has become of global importance as a fundamental building block for example in semiconductor device fabrication, and also gained more visibility (e.g., the Millennium Technology Prize 2018). In recent years, the number of ALD processes has increased, new groups have entered the field, and fundamental insights have been gained. At the same time, significantly varying views exist in the field related to the description and meaningfulness of some core ALD concepts. Open, respectful but critical scientific discussion would be needed around these concepts – for example at this AVS ALD/ALE conference, the world’s largest conference on ALD. read more >>